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IPD60R2K0C6ATMA1

IPD60R2K0C6ATMA1 Infineon Technologies

Infineon-IPD60R2K0C6-DS-v02_01-EN.pdf?fileId=db3a304329a0f6ee012a0dfc6b8b064f Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 2.4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V
Power Dissipation (Max): 22.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.53 EUR
Mindestbestellmenge: 2500
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Technische Details IPD60R2K0C6ATMA1 Infineon Technologies

Description: MOSFET N-CH 600V 2.4A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V, Power Dissipation (Max): 22.3W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 60µA, Supplier Device Package: PG-TO252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V.

Weitere Produktangebote IPD60R2K0C6ATMA1 nach Preis ab 0.52 EUR bis 2.02 EUR

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Preis ohne MwSt
IPD60R2K0C6ATMA1 IPD60R2K0C6ATMA1 Hersteller : Infineon Technologies Infineon_IPD60R2K0C6_DataSheet_v02_02_EN-3362730.pdf MOSFETs LOW POWER_LEGACY
auf Bestellung 4569 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.46 EUR
10+ 1.15 EUR
100+ 0.86 EUR
500+ 0.73 EUR
1000+ 0.62 EUR
2500+ 0.55 EUR
5000+ 0.52 EUR
Mindestbestellmenge: 2
IPD60R2K0C6ATMA1 IPD60R2K0C6ATMA1 Hersteller : Infineon Technologies Infineon-IPD60R2K0C6-DS-v02_01-EN.pdf?fileId=db3a304329a0f6ee012a0dfc6b8b064f Description: MOSFET N-CH 600V 2.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V
Power Dissipation (Max): 22.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.02 EUR
14+ 1.27 EUR
100+ 0.84 EUR
500+ 0.66 EUR
1000+ 0.6 EUR
Mindestbestellmenge: 9
IPD60R2K0C6ATMA1 IPD60R2K0C6ATMA1 Hersteller : Infineon Technologies infineon-ipd60r2k0c6-datasheet-v02_02-en.pdf Trans MOSFET N-CH 650V 2.4A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
IPD60R2K0C6ATMA1 Hersteller : INFINEON TECHNOLOGIES Infineon-IPD60R2K0C6-DS-v02_01-EN.pdf?fileId=db3a304329a0f6ee012a0dfc6b8b064f IPD60R2K0C6ATMA1 SMD N channel transistors
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