Technische Details IPD50R520CPATMA1 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3, Type of transistor: N-MOSFET, Technology: CoolMOS™, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 7.1A, Power dissipation: 66W, Case: PG-TO252-3, Gate-source voltage: ±20V, On-state resistance: 0.52Ω, Mounting: SMD, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IPD50R520CPATMA1
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IPD50R520CPATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 500V 7.1A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD50R520CPATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.1A Power dissipation: 66W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.52Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IPD50R520CPATMA1 | Hersteller : Infineon Technologies |
Description: LOW POWER_LEGACY |
Produkt ist nicht verfügbar |
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IPD50R520CPATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.1A Power dissipation: 66W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.52Ω Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |