IPD50R399CPATMA1 Infineon Technologies
auf Bestellung 1400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
94+ | 1.63 EUR |
100+ | 1.41 EUR |
110+ | 1.23 EUR |
250+ | 1.14 EUR |
500+ | 1.04 EUR |
1000+ | 0.97 EUR |
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Technische Details IPD50R399CPATMA1 Infineon Technologies
Description: LOW POWER_LEGACY, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 330µA, Supplier Device Package: PG-TO252-3-313, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V.
Weitere Produktangebote IPD50R399CPATMA1 nach Preis ab 0.97 EUR bis 3.24 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IPD50R399CPATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 500V 9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1400 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50R399CPATMA1 | Hersteller : Infineon Technologies | MOSFET N-Ch 550V 9A DPAK-2 |
auf Bestellung 3247 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD50R399CPATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 500V 9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50R399CPATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 500V 9A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD50R399CPATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 9A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.399Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPD50R399CPATMA1 | Hersteller : Infineon Technologies |
Description: LOW POWER_LEGACY Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 330µA Supplier Device Package: PG-TO252-3-313 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPD50R399CPATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 9A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.399Ω Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |