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IPD400N06NGBTMA1

IPD400N06NGBTMA1 Infineon Technologies


ipd400n06ngrev1.1.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 27A 3-Pin(2+Tab) DPAK T/R
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Technische Details IPD400N06NGBTMA1 Infineon Technologies

Description: MOSFET N-CH 60V 27A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 27A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 4V @ 28µA, Supplier Device Package: PG-TO252-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V.

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IPD400N06NGBTMA1 IPD400N06NGBTMA1 Hersteller : Infineon Technologies IPD400N06N+G+Rev1.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431be39b97011c31db9a4f795c Description: MOSFET N-CH 60V 27A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 27A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 28µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V
Produkt ist nicht verfügbar
IPD400N06NGBTMA1 IPD400N06NGBTMA1 Hersteller : Infineon Technologies IPD400N06N+G+Rev1.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431be39b97011c31db9a4f795c Description: MOSFET N-CH 60V 27A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 27A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 28µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V
Produkt ist nicht verfügbar