IPD30N06S215ATMA2 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 55V 30A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.89 EUR |
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Technische Details IPD30N06S215ATMA2 Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-31, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 14.7mOhm @ 30A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 4V @ 80µA, Supplier Device Package: PG-TO252-3-11, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V.
Weitere Produktangebote IPD30N06S215ATMA2 nach Preis ab 0.74 EUR bis 2.62 EUR
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IPD30N06S215ATMA2 | Hersteller : Infineon Technologies |
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IPD30N06S215ATMA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
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IPD30N06S215ATMA2 | Hersteller : Infineon Technologies |
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IPD30N06S215ATMA2 | Hersteller : Infineon Technologies |
MOSFETs N |
auf Bestellung 2544 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD30N06S215ATMA2 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 30A TO252-31 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 14.7mOhm @ 30A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 80µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V |
auf Bestellung 6559 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD30N06S215ATMA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD30N06S215ATMA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |