IPD14N06S2-80

IPD14N06S2-80 Infineon Technologies


ipd14n06s2-80_green.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 17A Automotive 3-Pin(2+Tab) DPAK T/R
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Technische Details IPD14N06S2-80 Infineon Technologies

Description: IPD14N06 - 55V-60V N-CHANNEL AUT, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V, Power Dissipation (Max): 47W (Tc), Vgs(th) (Max) @ Id: 4V @ 14µA, Supplier Device Package: PG-TO252-3-11, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V.

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IPD14N06S2-80 Hersteller : Infineon Technologies INFNS09524-1.pdf?t.download=true&u=5oefqw Description: IPD14N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
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IPD14N06S2-80 IPD14N06S2-80 Hersteller : Infineon Technologies Infineon-IPD14N06S2_80-DS-v01_00-en-785337.pdf MOSFET N-Ch 55V 17A DPAK-2 OptiMOS
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