IPD14N06S2-80 Infineon Technologies
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Technische Details IPD14N06S2-80 Infineon Technologies
Description: IPD14N06 - 55V-60V N-CHANNEL AUT, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V, Power Dissipation (Max): 47W (Tc), Vgs(th) (Max) @ Id: 4V @ 14µA, Supplier Device Package: PG-TO252-3-11, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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IPD14N06S2-80 | Hersteller : Infineon Technologies |
Description: IPD14N06 - 55V-60V N-CHANNEL AUT Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 4V @ 14µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V |
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IPD14N06S2-80 | Hersteller : Infineon Technologies | MOSFET N-Ch 55V 17A DPAK-2 OptiMOS |
Produkt ist nicht verfügbar |