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IPD10N03LAG infineon


Hersteller: infineon
07+ to-252/d-pak
auf Bestellung 30000 Stücke:

Lieferzeit 21-28 Tag (e)
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Technische Details IPD10N03LAG infineon

Description: MOSFET N-CH 25V 30A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 10.4mOhm @ 30A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 2V @ 20µA, Supplier Device Package: PG-TO252-3-11, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1358 pF @ 15 V.

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IPD10N03LAG Hersteller : infineon to-252/d-pak
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
IPD10N03LA G IPD10N03LA G Hersteller : Infineon Technologies ipd10n03la_rev1.7_g.pdf Description: MOSFET N-CH 25V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1358 pF @ 15 V
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IPD10N03LAG IPD10N03LAG Hersteller : Infineon Technologies DC_DC_Selection_1-520800.pdf MOSFET N-Ch 25V 30A DPAK-2
Produkt ist nicht verfügbar