IPD050N03L G Infineon Technologies
auf Bestellung 2500 Stücke:
Lieferzeit 108-112 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.16 EUR |
| 10+ | 1.45 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.92 EUR |
| 1000+ | 0.83 EUR |
| 2500+ | 0.70 EUR |
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Technische Details IPD050N03L G Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PG-TO252-3-11, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IPD050N03L G | Hersteller : Infineon |
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auf Bestellung 129200 Stücke: Lieferzeit 21-28 Tag (e) |
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IPD050N03L G | Hersteller : Infineon Technologies |
Description: OPTLMOS N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V |
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