IPC218N06N3X1SA2 Infineon Technologies
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Technische Details IPC218N06N3X1SA2 Infineon Technologies
Description: MOSFET N-CH 60V 3A SAWN ON FOIL, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tj), Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V, Vgs(th) (Max) @ Id: 4V @ 196µA, Supplier Device Package: Sawn on foil, Drive Voltage (Max Rds On, Min Rds On): 10V, Drain to Source Voltage (Vdss): 60 V.
Weitere Produktangebote IPC218N06N3X1SA2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IPC218N06N3X1SA2 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 60V 3A SAWN ON FOILPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tj) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 196µA Supplier Device Package: Sawn on foil Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 60 V |
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