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IPC100N04S51R9ATMA1 Infineon Technologies
auf Bestellung 395000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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5000+ | 1.02 EUR |
10000+ | 0.97 EUR |
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Technische Details IPC100N04S51R9ATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 100A 8TDSON-34, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 50µA, Supplier Device Package: PG-TDSON-8-34, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPC100N04S51R9ATMA1 nach Preis ab 0.75 EUR bis 2.59 EUR
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IPC100N04S51R9ATMA1 | Hersteller : Infineon Technologies |
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auf Bestellung 395000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPC100N04S51R9ATMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 50µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPC100N04S51R9ATMA1 | Hersteller : Infineon Technologies |
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auf Bestellung 4328 Stücke: Lieferzeit 14-21 Tag (e) |
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IPC100N04S51R9ATMA1 | Hersteller : Infineon Technologies |
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auf Bestellung 4328 Stücke: Lieferzeit 14-21 Tag (e) |
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IPC100N04S51R9ATMA1 | Hersteller : Infineon Technologies |
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auf Bestellung 4900 Stücke: Lieferzeit 14-21 Tag (e) |
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IPC100N04S51R9ATMA1 | Hersteller : Infineon Technologies |
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auf Bestellung 13027 Stücke: Lieferzeit 10-14 Tag (e) |
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IPC100N04S51R9ATMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 50µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 8580 Stücke: Lieferzeit 10-14 Tag (e) |
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IPC100N04S51R9ATMA1 | Hersteller : ROCHESTER ELECTRONICS |
![]() tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 26880 Stücke: Lieferzeit 14-21 Tag (e) |
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IPC100N04S51R9ATMA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |