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IPBE65R115CFD7AATMA1

IPBE65R115CFD7AATMA1 Infineon Technologies

Infineon_IPBE65R115CFD7A_DataSheet_v02_02_EN-3362550.pdf Hersteller: Infineon Technologies
MOSFETs N
auf Bestellung 757 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.85 EUR
10+ 6.62 EUR
100+ 5.35 EUR
500+ 4.75 EUR
1000+ 4.07 EUR
2000+ 3.82 EUR
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Technische Details IPBE65R115CFD7AATMA1 Infineon Technologies

Description: AUTOMOTIVE_COOLMOS PG-TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 490µA, Supplier Device Package: PG-TO263-7-11, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V.

Weitere Produktangebote IPBE65R115CFD7AATMA1 nach Preis ab 4.76 EUR bis 7.88 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IPBE65R115CFD7AATMA1 IPBE65R115CFD7AATMA1 Hersteller : Infineon Technologies Infineon-IPBE65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f33391547c90 Description: AUTOMOTIVE_COOLMOS PG-TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
auf Bestellung 976 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.88 EUR
10+ 6.62 EUR
100+ 5.35 EUR
500+ 4.76 EUR
Mindestbestellmenge: 3
IPBE65R115CFD7AATMA1 Hersteller : Infineon Technologies infineon-ipbe65r115cfd7a-datasheet-v02_02-en.pdf N-Channel MOSFET Transistor
Produkt ist nicht verfügbar
IPBE65R115CFD7AATMA1 IPBE65R115CFD7AATMA1 Hersteller : Infineon Technologies Infineon-IPBE65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f33391547c90 Description: AUTOMOTIVE_COOLMOS PG-TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Produkt ist nicht verfügbar