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IPB95R310PFD7ATMA1

IPB95R310PFD7ATMA1 Infineon Technologies

Infineon_IPB95R310PFD7_DataSheet_v02_01_EN-3011920.pdf Hersteller: Infineon Technologies
MOSFET LOW POWER_NEW
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.05 EUR
10+ 5.07 EUR
25+ 4.79 EUR
100+ 4.1 EUR
250+ 3.87 EUR
500+ 3.64 EUR
1000+ 3.13 EUR
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Technische Details IPB95R310PFD7ATMA1 Infineon Technologies

Description: LOW POWER_NEW, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc), Rds On (Max) @ Id, Vgs: 310mOhm @ 10.4A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 520µA, Supplier Device Package: PG-TO263-3-2, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 400 V.

Weitere Produktangebote IPB95R310PFD7ATMA1 nach Preis ab 3.61 EUR bis 7.69 EUR

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Preis ohne MwSt
IPB95R310PFD7ATMA1 Hersteller : Infineon Technologies Infineon-IPB95R310PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81fb7ad20181fbb45264031b Description: LOW POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 10.4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 400 V
auf Bestellung 336 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.69 EUR
10+ 5.09 EUR
100+ 3.61 EUR
Mindestbestellmenge: 3
IPB95R310PFD7ATMA1 Hersteller : Infineon Technologies infineon-ipb95r310pfd7-datasheet-v02_01-en.pdf N Channel Power Mosfet
Produkt ist nicht verfügbar
IPB95R310PFD7ATMA1 IPB95R310PFD7ATMA1 Hersteller : Infineon Technologies infineon-ipb95r310pfd7-datasheet-v02_01-en.pdf Trans MOSFET N-CH 950V 17.5A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IPB95R310PFD7ATMA1 Hersteller : Infineon Technologies Infineon-IPB95R310PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81fb7ad20181fbb45264031b Description: LOW POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 10.4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 400 V
Produkt ist nicht verfügbar