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IPB80P04P405ATMA2

IPB80P04P405ATMA2 Infineon Technologies

Infineon-IPP_B_I80P04P4_05-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f7833bcf12e3a Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+2.49 EUR
Mindestbestellmenge: 1000
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Technische Details IPB80P04P405ATMA2 Infineon Technologies

Description: MOSFET P-CH 40V 80A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote IPB80P04P405ATMA2 nach Preis ab 2.46 EUR bis 4.82 EUR

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IPB80P04P405ATMA2 IPB80P04P405ATMA2 Hersteller : Infineon Technologies Infineon-IPP_B_I80P04P4_05-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f7833bcf12e3a Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1865 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.82 EUR
10+ 4.05 EUR
100+ 3.28 EUR
500+ 2.91 EUR
Mindestbestellmenge: 4
IPB80P04P405ATMA2 Hersteller : Infineon Technologies Infineon_IPP_B_I80P04P4_05_DS_v01_00_en-1731948.pdf MOSFET MOSFET_(20V 40V)
auf Bestellung 4943 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.79 EUR
10+ 4.03 EUR
25+ 3.98 EUR
100+ 3.26 EUR
250+ 3.2 EUR
500+ 2.9 EUR
1000+ 2.46 EUR
IPB80P04P405ATMA2 Hersteller : Infineon Technologies ipp_b_i80p04p4-05_ds_10.pdf Power MOSFET Transistor
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