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IPB80N06S4L07ATMA2

IPB80N06S4L07ATMA2 Infineon Technologies

Infineon-IPP_B_I80N06S4L_07-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038ea8e6c0d10 Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+1.3 EUR
2000+ 1.21 EUR
3000+ 1.18 EUR
Mindestbestellmenge: 1000
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Technische Details IPB80N06S4L07ATMA2 Infineon Technologies

Description: MOSFET N-CH 60V 80A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 40µA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

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Preis ohne MwSt
IPB80N06S4L07ATMA2 IPB80N06S4L07ATMA2 Hersteller : Infineon Technologies Infineon_IPP_B_I80N06S4L_07_DS_v01_00_en-1227111.pdf MOSFETs N-Ch 60V 80A D2PAK-2
auf Bestellung 1972 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+2.83 EUR
10+ 2.36 EUR
100+ 1.88 EUR
250+ 1.83 EUR
500+ 1.57 EUR
1000+ 1.34 EUR
2000+ 1.28 EUR
IPB80N06S4L07ATMA2 IPB80N06S4L07ATMA2 Hersteller : Infineon Technologies Infineon-IPP_B_I80N06S4L_07-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038ea8e6c0d10 Description: MOSFET N-CH 60V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4 EUR
10+ 2.58 EUR
100+ 1.76 EUR
500+ 1.42 EUR
Mindestbestellmenge: 5
IPB80N06S4L07ATMA2 Hersteller : Infineon Infineon-IPP_B_I80N06S4L_07-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038ea8e6c0d10
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
IPB80N06S4L07ATMA2 IPB80N06S4L07ATMA2 Hersteller : Infineon Technologies ipp_b_i80n06s4l-07_ds_10.pdf Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
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