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IPB80N06S2L11ATMA2

IPB80N06S2L11ATMA2 Infineon Technologies

Infineon_IPP_B_I80N06S2L_11_DS_v01_01_en-1731831.pdf Hersteller: Infineon Technologies
MOSFETs MOSFET_)40V 60V)
auf Bestellung 793 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.4 EUR
10+ 2.59 EUR
100+ 1.87 EUR
500+ 1.62 EUR
1000+ 1.49 EUR
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Technische Details IPB80N06S2L11ATMA2 Infineon Technologies

Description: MOSFET N-CH 55V 80A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 10.7mOhm @ 40A, 10V, Power Dissipation (Max): 158W (Tc), Vgs(th) (Max) @ Id: 2V @ 93µA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V.

Weitere Produktangebote IPB80N06S2L11ATMA2 nach Preis ab 1.73 EUR bis 4.75 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IPB80N06S2L11ATMA2 IPB80N06S2L11ATMA2 Hersteller : Infineon Technologies Infineon-IPP_B_I80N06S2L_11-DS-v01_01-en.pdf?fileId=db3a304412b407950112b4333e375ac6&ack=t Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 40A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2V @ 93µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V
auf Bestellung 827 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.75 EUR
10+ 3.09 EUR
100+ 2.14 EUR
500+ 1.73 EUR
Mindestbestellmenge: 4
IPB80N06S2L11ATMA2 Hersteller : Infineon Infineon-IPP_B_I80N06S2L_11-DS-v01_01-en.pdf?fileId=db3a304412b407950112b4333e375ac6&ack=t
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
IPB80N06S2L11ATMA2 IPB80N06S2L11ATMA2 Hersteller : Infineon Technologies ipp_b_i80n06s2l-11_green.pdf Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IPB80N06S2L11ATMA2 IPB80N06S2L11ATMA2 Hersteller : Infineon Technologies ipp_b_i80n06s2l-11_green.pdf Trans MOSFET N-CH 55V 80A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IPB80N06S2L11ATMA2 IPB80N06S2L11ATMA2 Hersteller : Infineon Technologies Infineon-IPP_B_I80N06S2L_11-DS-v01_01-en.pdf?fileId=db3a304412b407950112b4333e375ac6&ack=t Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 40A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2V @ 93µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V
Produkt ist nicht verfügbar