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IPB70N10S312ATMA1

IPB70N10S312ATMA1 Infineon Technologies

ipp_b_i70n10s3-12_neu.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 70A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1000+2.4 EUR
Mindestbestellmenge: 1000
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Technische Details IPB70N10S312ATMA1 Infineon Technologies

Description: MOSFET N-CH 100V 70A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 11.3mOhm @ 70A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 83µA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V.

Weitere Produktangebote IPB70N10S312ATMA1 nach Preis ab 2.08 EUR bis 4.75 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IPB70N10S312ATMA1 IPB70N10S312ATMA1 Hersteller : Infineon Technologies Infineon-IPP_B_I70N10S3_12-DS-v01_00-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a909803815967&ack=t Description: MOSFET N-CH 100V 70A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
auf Bestellung 621 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.7 EUR
10+ 3.9 EUR
100+ 3.11 EUR
500+ 2.63 EUR
Mindestbestellmenge: 4
IPB70N10S312ATMA1 IPB70N10S312ATMA1 Hersteller : Infineon Technologies Infineon_IPP_B_I70N10S3_12_DataSheet_v01_02_EN-3362437.pdf MOSFETs N-Ch 100V 70A D2PAK-2 OptiMOS-T
auf Bestellung 911 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.75 EUR
10+ 3.94 EUR
100+ 3.15 EUR
250+ 3.08 EUR
500+ 2.66 EUR
1000+ 2.31 EUR
2000+ 2.08 EUR
IPB70N10S312ATMA1 IPB70N10S312ATMA1 Hersteller : Infineon Technologies ipp_b_i70n10s3-12_neu.pdf Trans MOSFET N-CH 100V 70A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IPB70N10S312ATMA1 IPB70N10S312ATMA1 Hersteller : Infineon Technologies Infineon-IPP_B_I70N10S3_12-DS-v01_00-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a909803815967&ack=t Description: MOSFET N-CH 100V 70A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Produkt ist nicht verfügbar