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IPB65R660CFDAATMA1

IPB65R660CFDAATMA1 Infineon Technologies

INFN-S-A0003823031-1.pdf?t.download=true&u=5oefqw Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 3.2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+1.92 EUR
2000+ 1.82 EUR
Mindestbestellmenge: 1000
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Technische Details IPB65R660CFDAATMA1 Infineon Technologies

Description: MOSFET N-CH 650V 6A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 660mOhm @ 3.2A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 200µA, Supplier Device Package: PG-TO263-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V, Grade: Automotive, Qualification: AEC-Q101.

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IPB65R660CFDAATMA1 IPB65R660CFDAATMA1 Hersteller : Infineon Technologies Infineon_IPX65R660CFDA_DS_v02_03_EN-1731997.pdf MOSFETs N-Ch 650V 6A D2PAK-2
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.17 EUR
10+ 2.87 EUR
100+ 2.55 EUR
250+ 2.53 EUR
500+ 2.29 EUR
1000+ 1.95 EUR
2000+ 1.85 EUR
IPB65R660CFDAATMA1 IPB65R660CFDAATMA1 Hersteller : Infineon Technologies INFN-S-A0003823031-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 650V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 3.2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 4518 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.03 EUR
10+ 3.35 EUR
100+ 2.67 EUR
500+ 2.26 EUR
Mindestbestellmenge: 5
IPB65R660CFDAATMA1 Hersteller : Infineon INFN-S-A0003823031-1.pdf?t.download=true&u=5oefqw
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)