![IPB65R660CFDAATMA1 IPB65R660CFDAATMA1](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/3111/MFG_IRG4RC10UTRPBF.jpg)
IPB65R660CFDAATMA1 Infineon Technologies
![INFN-S-A0003823031-1.pdf?t.download=true&u=5oefqw](/images/adobe-acrobat.png)
Description: MOSFET N-CH 650V 6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 3.2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1000+ | 1.92 EUR |
2000+ | 1.82 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPB65R660CFDAATMA1 Infineon Technologies
Description: MOSFET N-CH 650V 6A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 660mOhm @ 3.2A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 200µA, Supplier Device Package: PG-TO263-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IPB65R660CFDAATMA1 nach Preis ab 1.85 EUR bis 4.03 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IPB65R660CFDAATMA1 | Hersteller : Infineon Technologies |
![]() |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
IPB65R660CFDAATMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 660mOhm @ 3.2A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 200µA Supplier Device Package: PG-TO263-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V Qualification: AEC-Q101 |
auf Bestellung 4518 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
IPB65R660CFDAATMA1 | Hersteller : Infineon |
![]() |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |