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IPB65R110CFD7ATMA1

IPB65R110CFD7ATMA1 Infineon Technologies

Infineon-IPB65R110CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758ef4f3d049df Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+4.04 EUR
Mindestbestellmenge: 1000
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Technische Details IPB65R110CFD7ATMA1 Infineon Technologies

Description: HIGH POWER_NEW, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 9.7A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 480µA, Supplier Device Package: PG-TO263-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V.

Weitere Produktangebote IPB65R110CFD7ATMA1 nach Preis ab 3.22 EUR bis 7.83 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IPB65R110CFD7ATMA1 IPB65R110CFD7ATMA1 Hersteller : Infineon Technologies Infineon_IPB65R110CFD7_DataSheet_v02_00_EN-1954054.pdf MOSFETs N
auf Bestellung 740 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.64 EUR
10+ 5.58 EUR
100+ 4.52 EUR
500+ 4.01 EUR
1000+ 3.41 EUR
2000+ 3.22 EUR
IPB65R110CFD7ATMA1 IPB65R110CFD7ATMA1 Hersteller : Infineon Technologies Infineon-IPB65R110CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758ef4f3d049df Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
auf Bestellung 1736 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.83 EUR
10+ 6.57 EUR
100+ 5.31 EUR
500+ 4.72 EUR
Mindestbestellmenge: 3
IPB65R110CFD7ATMA1 Hersteller : Infineon Technologies infineon-ipb65r110cfd7-datasheet-v02_00-en.pdf SP005413365
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