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IPB65R099CFD7AATMA1

IPB65R099CFD7AATMA1 Infineon Technologies

Infineon-IPB65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e8a372b6805 Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+3.92 EUR
Mindestbestellmenge: 1000
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Technische Details IPB65R099CFD7AATMA1 Infineon Technologies

Description: MOSFET N-CH 650V 24A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V, Power Dissipation (Max): 127W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 630µA, Supplier Device Package: PG-TO263-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V, Qualification: AEC-Q101.

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IPB65R099CFD7AATMA1 IPB65R099CFD7AATMA1 Hersteller : Infineon Technologies Infineon_IPB65R099CFD7A_DataSheet_v02_01_EN-3362233.pdf MOSFETs N
auf Bestellung 1312 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+8.73 EUR
10+ 6.74 EUR
25+ 6.72 EUR
100+ 4.86 EUR
500+ 4.24 EUR
IPB65R099CFD7AATMA1 IPB65R099CFD7AATMA1 Hersteller : Infineon Technologies Infineon-IPB65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e8a372b6805 Description: MOSFET N-CH 650V 24A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.57 EUR
10+ 6.44 EUR
100+ 5.02 EUR
500+ 4.59 EUR
Mindestbestellmenge: 2
IPB65R099CFD7AATMA1 Hersteller : Infineon Technologies infineon-ipb65r099cfd7a-datasheet-v02_01-en.pdf N-Channel MOSFET Transistor
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