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IPB65R045C7ATMA2

IPB65R045C7ATMA2 Infineon Technologies

Infineon-IPB65R045C7-DS-v02_01-en.pdf?fileId=db3a30433e78ea82013e790478550043 Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 46A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
auf Bestellung 981 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+14.71 EUR
10+ 10.57 EUR
100+ 8.26 EUR
Mindestbestellmenge: 2
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Technische Details IPB65R045C7ATMA2 Infineon Technologies

Description: MOSFET N-CH 650V 46A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.25mA, Supplier Device Package: PG-TO263-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V.

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IPB65R045C7ATMA2 IPB65R045C7ATMA2 Hersteller : Infineon Technologies Infineon_IPB65R045C7_DS_v02_01_en-1226920.pdf MOSFET HIGH POWER_NEW
auf Bestellung 4739 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+20.8 EUR
10+ 18.34 EUR
25+ 17.83 EUR
50+ 16.84 EUR
100+ 15.84 EUR
250+ 15.35 EUR
500+ 14.36 EUR
IPB65R045C7ATMA2 IPB65R045C7ATMA2 Hersteller : Infineon Technologies ds_ipb65r045c7_2_1.pdf Trans MOSFET N-CH 650V 46A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 834 Stücke:
Lieferzeit 14-21 Tag (e)
IPB65R045C7ATMA2 IPB65R045C7ATMA2 Hersteller : Infineon Technologies ds_ipb65r045c7_2_1.pdf Trans MOSFET N-CH 650V 46A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
IPB65R045C7ATMA2 IPB65R045C7ATMA2 Hersteller : Infineon Technologies Infineon-IPB65R045C7-DS-v02_01-en.pdf?fileId=db3a30433e78ea82013e790478550043 Description: MOSFET N-CH 650V 46A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
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