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IPB60R280P6ATMA1

IPB60R280P6ATMA1 Infineon Technologies

Infineon_IPB60R280P6_DS_v02_02_EN-1731630.pdf Hersteller: Infineon Technologies
MOSFETs LOW POWER_PRICE/PERFORM
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
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1+3.63 EUR
10+ 2.73 EUR
100+ 1.97 EUR
500+ 1.65 EUR
1000+ 1.59 EUR
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Technische Details IPB60R280P6ATMA1 Infineon Technologies

Description: MOSFET N-CH 600V 13.8A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 430µA, Supplier Device Package: PG-TO263-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V.

Weitere Produktangebote IPB60R280P6ATMA1 nach Preis ab 1.62 EUR bis 3.98 EUR

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IPB60R280P6ATMA1 IPB60R280P6ATMA1 Hersteller : Infineon Technologies Infineon-IPX60R280P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e269e3e0021 Description: MOSFET N-CH 600V 13.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
auf Bestellung 982 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.98 EUR
10+ 2.72 EUR
100+ 1.95 EUR
500+ 1.62 EUR
Mindestbestellmenge: 5
IPB60R280P6ATMA1 IPB60R280P6ATMA1 Hersteller : Infineon Technologies infineon-ipb60r280p6-ds-v02_02-en.pdffileid5546d4624e765da5014ede.pdf Trans MOSFET N-CH 600V 13.8A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IPB60R280P6ATMA1 IPB60R280P6ATMA1 Hersteller : Infineon Technologies Infineon-IPX60R280P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e269e3e0021 Description: MOSFET N-CH 600V 13.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Produkt ist nicht verfügbar