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IPB60R160P6ATMA1 Infineon Technologies
auf Bestellung 2084 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 5.79 EUR |
10+ | 4.86 EUR |
25+ | 4.72 EUR |
100+ | 3.94 EUR |
250+ | 3.71 EUR |
500+ | 3.57 EUR |
1000+ | 3.06 EUR |
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Technische Details IPB60R160P6ATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 23.8A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V, Power Dissipation (Max): 176W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 750µA, Supplier Device Package: PG-TO263-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V.
Weitere Produktangebote IPB60R160P6ATMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IPB60R160P6ATMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 750µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V |
auf Bestellung 244 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB60R160P6ATMA1 | Hersteller : Infineon |
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auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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IPB60R160P6ATMA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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IPB60R160P6ATMA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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IPB60R160P6ATMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 750µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V |
Produkt ist nicht verfügbar |