![IPB60R160C6ATMA1 IPB60R160C6ATMA1](https://static6.arrow.com/aropdfconversion/arrowimages/7ad6e9eda3d1ab6a85036cc716280724714b80f9/infineon-package-d2pak-to263.jpg)
IPB60R160C6ATMA1 Infineon Technologies
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1000+ | 2.77 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPB60R160C6ATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 23.8A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V, Power Dissipation (Max): 176W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 750µA, Supplier Device Package: PG-TO263-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V.
Weitere Produktangebote IPB60R160C6ATMA1 nach Preis ab 2.95 EUR bis 7.88 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IPB60R160C6ATMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 750µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
![]() |
IPB60R160C6ATMA1 | Hersteller : Infineon Technologies |
![]() |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
![]() |
IPB60R160C6ATMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 750µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V |
auf Bestellung 5747 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
![]() |
IPB60R160C6ATMA1 | Hersteller : Infineon Technologies |
![]() |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||
![]() |
IPB60R160C6ATMA1 | Hersteller : Infineon Technologies |
![]() |
Produkt ist nicht verfügbar |
|||||||||||
![]() |
IPB60R160C6ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23.8A Power dissipation: 176W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
![]() |
IPB60R160C6ATMA1 | Hersteller : Infineon Technologies |
![]() |
Produkt ist nicht verfügbar |
|||||||||||
![]() |
IPB60R160C6ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23.8A Power dissipation: 176W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |