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IPB60R160C6ATMA1

IPB60R160C6ATMA1 Infineon Technologies

2349281056066923infineon-ipw60r160c6-ds-v02_01-en.pdffileiddb3a304323b87bc20123f0.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 23.8A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1000+2.77 EUR
Mindestbestellmenge: 1000
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Technische Details IPB60R160C6ATMA1 Infineon Technologies

Description: MOSFET N-CH 600V 23.8A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V, Power Dissipation (Max): 176W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 750µA, Supplier Device Package: PG-TO263-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V.

Weitere Produktangebote IPB60R160C6ATMA1 nach Preis ab 2.95 EUR bis 7.88 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IPB60R160C6ATMA1 IPB60R160C6ATMA1 Hersteller : Infineon Technologies IPB60R160C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304323b87bc20123ffdae47e5c35 Description: MOSFET N-CH 600V 23.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 750µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+2.95 EUR
Mindestbestellmenge: 1000
IPB60R160C6ATMA1 IPB60R160C6ATMA1 Hersteller : Infineon Technologies 2349281056066923infineon-ipw60r160c6-ds-v02_01-en.pdffileiddb3a304323b87bc20123f0.pdf Trans MOSFET N-CH 600V 23.8A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1000+3 EUR
Mindestbestellmenge: 1000
IPB60R160C6ATMA1 IPB60R160C6ATMA1 Hersteller : Infineon Technologies IPB60R160C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304323b87bc20123ffdae47e5c35 Description: MOSFET N-CH 600V 23.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 750µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V
auf Bestellung 5747 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.88 EUR
10+ 5.23 EUR
100+ 3.73 EUR
500+ 3.08 EUR
Mindestbestellmenge: 3
IPB60R160C6ATMA1 IPB60R160C6ATMA1 Hersteller : Infineon Technologies 2349281056066923infineon-ipw60r160c6-ds-v02_01-en.pdffileiddb3a304323b87bc20123f0.pdf Trans MOSFET N-CH 600V 23.8A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
IPB60R160C6ATMA1 IPB60R160C6ATMA1 Hersteller : Infineon Technologies 2349281056066923infineon-ipw60r160c6-ds-v02_01-en.pdffileiddb3a304323b87bc20123f0.pdf Trans MOSFET N-CH 600V 23.8A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IPB60R160C6ATMA1 IPB60R160C6ATMA1 Hersteller : INFINEON TECHNOLOGIES IPB60R160C6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB60R160C6ATMA1 IPB60R160C6ATMA1 Hersteller : Infineon Technologies Infineon_IPB60R160C6_DS_v02_03_EN-1731782.pdf MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6
Produkt ist nicht verfügbar
IPB60R160C6ATMA1 IPB60R160C6ATMA1 Hersteller : INFINEON TECHNOLOGIES IPB60R160C6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar