auf Bestellung 881 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 9.24 EUR |
| 10+ | 7.78 EUR |
| 25+ | 7.76 EUR |
| 100+ | 6.28 EUR |
| 500+ | 5.6 EUR |
| 1000+ | 4.79 EUR |
| 2000+ | 4.51 EUR |
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Technische Details IPB60R070CFD7ATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 31A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 760µA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V.
Weitere Produktangebote IPB60R070CFD7ATMA1 nach Preis ab 8.78 EUR bis 10.23 EUR
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IPB60R070CFD7ATMA1 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 600V 31A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 760µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V |
auf Bestellung 31 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB60R070CFD7ATMA1 | Hersteller : Infineon Technologies |
Power Transistor MOSFET |
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IPB60R070CFD7ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 31A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 760µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V |
Produkt ist nicht verfügbar |