auf Bestellung 364 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 10.63 EUR |
| 10+ | 9.7 EUR |
| 25+ | 8.85 EUR |
| 100+ | 8.43 EUR |
| 250+ | 8.31 EUR |
| 500+ | 6.85 EUR |
| 2000+ | 6.48 EUR |
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Technische Details IPB60R045P7ATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 61A TO263-3-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 61A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V, Power Dissipation (Max): 201W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.08mA, Supplier Device Package: PG-TO263-3-2, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3891 pF @ 400 V.
Weitere Produktangebote IPB60R045P7ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IPB60R045P7ATMA1 Produktcode: 162243 |
 Transistoren > MOSFET N-CH |
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IPB60R045P7ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 61A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IPB60R045P7ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 61A TO263-3-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V Power Dissipation (Max): 201W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.08mA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3891 pF @ 400 V |
Produkt ist nicht verfügbar |
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IPB60R045P7ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 61A TO263-3-2 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V Power Dissipation (Max): 201W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.08mA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3891 pF @ 400 V |
Produkt ist nicht verfügbar |