auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.29 EUR |
| 10+ | 3.87 EUR |
| 100+ | 3.1 EUR |
| 500+ | 2.55 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPB50N12S3L15ATMA1 Infineon Technologies
Description: MOSFET N-CHANNEL_100+, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 60µA, Supplier Device Package: PG-TO263-3-2, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPB50N12S3L15ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
IPB50N12S3L15ATMA1 | Hersteller : Infineon Technologies |
 Power MOSFET Transistor |
Produkt ist nicht verfügbar |
|
| IPB50N12S3L15ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CHANNEL_100+ Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 60µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |