auf Bestellung 841 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.54 EUR |
| 10+ | 3.17 EUR |
| 100+ | 2.55 EUR |
| 500+ | 2.09 EUR |
| 1000+ | 1.73 EUR |
| 2000+ | 1.6 EUR |
| 5000+ | 1.55 EUR |
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Technische Details IPB45P03P4L11ATMA2 Infineon Technologies
Description: MOSFET_(20V 40V) PG-TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V, Power Dissipation (Max): 58W (Tc), Vgs(th) (Max) @ Id: 2V @ 85µA, Supplier Device Package: PG-TO263-3-2, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +5V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IPB45P03P4L11ATMA2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IPB45P03P4L11ATMA2 | Hersteller : Infineon Technologies |
 Power MOSFET Transistor |
Produkt ist nicht verfügbar |
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| IPB45P03P4L11ATMA2 | Hersteller : Infineon Technologies |
Description: MOSFET_(20V 40V) PG-TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 2V @ 85µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |