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IPB180P04P4L02ATMA2

IPB180P04P4L02ATMA2 Infineon Technologies

Infineon-IPB180P04P4L-02-DataSheet-v01_04-EN.pdf?fileId=5546d4627aa5d4f5017b784846aa726d Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 410µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18700 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+2.95 EUR
Mindestbestellmenge: 1000
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Technische Details IPB180P04P4L02ATMA2 Infineon Technologies

Description: MOSFET P-CH 40V 180A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 410µA, Supplier Device Package: PG-TO263-7-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +5V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18700 pF @ 25 V.

Weitere Produktangebote IPB180P04P4L02ATMA2 nach Preis ab 3.04 EUR bis 7.76 EUR

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IPB180P04P4L02ATMA2 IPB180P04P4L02ATMA2 Hersteller : Infineon Technologies Infineon_IPB180P04P4L_02_DataSheet_v01_04_EN-3362376.pdf MOSFETs N
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.55 EUR
10+ 5.49 EUR
100+ 4.45 EUR
500+ 3.96 EUR
1000+ 3.33 EUR
2000+ 3.19 EUR
IPB180P04P4L02ATMA2 IPB180P04P4L02ATMA2 Hersteller : Infineon Technologies Infineon-IPB180P04P4L-02-DataSheet-v01_04-EN.pdf?fileId=5546d4627aa5d4f5017b784846aa726d Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 410µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18700 pF @ 25 V
auf Bestellung 3657 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.76 EUR
10+ 5.16 EUR
100+ 3.68 EUR
500+ 3.04 EUR
Mindestbestellmenge: 3
IPB180P04P4L02ATMA2 IPB180P04P4L02ATMA2 Hersteller : Infineon Technologies infineon-ipb180p04p4l-02-datasheet-v01_04-en.pdf Power MOSFET Transistor
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
IPB180P04P4L02ATMA2 Hersteller : INFINEON TECHNOLOGIES Infineon-IPB180P04P4L-02-DataSheet-v01_04-EN.pdf?fileId=5546d4627aa5d4f5017b784846aa726d IPB180P04P4L02ATMA SMD P channel transistors
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