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IPB180N10S403ATMA1

IPB180N10S403ATMA1 Infineon Technologies

IPB180N10S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c3417b40af7 Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+4.44 EUR
Mindestbestellmenge: 1000
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Technische Details IPB180N10S403ATMA1 Infineon Technologies

Description: MOSFET N-CH 100V 180A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 180µA, Supplier Device Package: PG-TO263-7-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

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IPB180N10S403ATMA1 IPB180N10S403ATMA1 Hersteller : Infineon Technologies Infineon_IPB180N10S4_03_DataSheet_v01_10_EN-3362476.pdf MOSFET MOSFET_(75V 120V(
auf Bestellung 160 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+8.66 EUR
10+ 7.29 EUR
25+ 7.08 EUR
100+ 5.9 EUR
250+ 5.72 EUR
500+ 5.53 EUR
1000+ 4.49 EUR
IPB180N10S403ATMA1 IPB180N10S403ATMA1 Hersteller : Infineon Technologies IPB180N10S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c3417b40af7 Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1155 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.21 EUR
10+ 6.85 EUR
100+ 4.95 EUR
500+ 4.14 EUR
Mindestbestellmenge: 2
IPB180N10S403ATMA1 IPB180N10S403ATMA1 Hersteller : Infineon Technologies 401ipb180n10s4-03-data-sheet-10-infineon.pdffolderiddb3a30431f848401.pdf Trans MOSFET N-CH 100V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
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