![IPB180N04S4LH0ATMA1 IPB180N04S4LH0ATMA1](https://www.mouser.com/images/mouserelectronics/lrg/TO_263_D2PAK_7_SPL.jpg)
IPB180N04S4LH0ATMA1 Infineon Technologies
auf Bestellung 485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 6.85 EUR |
10+ | 5.74 EUR |
25+ | 5.44 EUR |
100+ | 4.65 EUR |
250+ | 4.38 EUR |
500+ | 4.12 EUR |
1000+ | 3.54 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPB180N04S4LH0ATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 180A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 180µA, Supplier Device Package: PG-TO263-7-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 24440 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPB180N04S4LH0ATMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
![]() |
IPB180N04S4LH0ATMA1 | Hersteller : Infineon Technologies |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
IPB180N04S4LH0ATMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 180µA Supplier Device Package: PG-TO263-7-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24440 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |