IPB180N04S302ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET N-CH 40V 180A Automotive AEC-Q101 7-Pin(6+Tab) D2PAK T/R
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 4.71 EUR |
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Technische Details IPB180N04S302ATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 180A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 230µA, Supplier Device Package: PG-TO263-7-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V.
Weitere Produktangebote IPB180N04S302ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IPB180N04S302ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 180A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 230µA Supplier Device Package: PG-TO263-7-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB180N04S302ATMA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPB180N04S302ATMA1 - IPB180N04 - 20V-40V N-CHANNEL AUTOMOTIVE euEccn: TBC hazardous: true productTraceability: Yes-Date/Lot Code usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB180N04S302ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 180A Automotive 7-Pin(6+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IPB180N04S302ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 180A Automotive AEC-Q101 7-Pin(6+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IPB180N04S302ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 180A Automotive AEC-Q101 7-Pin(6+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IPB180N04S302ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 180A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 230µA Supplier Device Package: PG-TO263-7-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V |
Produkt ist nicht verfügbar |