IPB180N03S4L-01 Infineon Technologies
auf Bestellung 2994 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5.74 EUR |
| 10+ | 4.8 EUR |
| 25+ | 4.54 EUR |
| 100+ | 3.56 EUR |
| 500+ | 2.92 EUR |
| 1000+ | 2.83 EUR |
| 2000+ | 2.8 EUR |
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Technische Details IPB180N03S4L-01 Infineon Technologies
Description: IPB180N03 - 20V-40V N-CHANNEL AU, Packaging: Bulk, Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 140µA, Supplier Device Package: PG-TO263-7-3-10, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 17600 pF @ 25 V.
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IPB180N03S4L-01 | Hersteller : Infineon Technologies |
 Description: IPB180N03 - 20V-40V N-CHANNEL AUPackaging: Bulk Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 140µA Supplier Device Package: PG-TO263-7-3-10 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17600 pF @ 25 V |
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