IPB156N22NFDATMA1 Infineon Technologies
auf Bestellung 3985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 12.37 EUR |
10+ | 10.61 EUR |
25+ | 10.05 EUR |
100+ | 8.84 EUR |
250+ | 8.31 EUR |
500+ | 7.81 EUR |
1000+ | 6.86 EUR |
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Technische Details IPB156N22NFDATMA1 Infineon Technologies
Description: MOSFET N-CH 220V 72A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), Rds On (Max) @ Id, Vgs: 15.6mOhm @ 50A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 270µA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 220 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 110 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 110.
Weitere Produktangebote IPB156N22NFDATMA1 nach Preis ab 6.29 EUR bis 12.78 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IPB156N22NFDATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 220V 72A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 15.6mOhm @ 50A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 220 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 110 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 110 |
auf Bestellung 1036 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB156N22NFDATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 600V 20A |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB156N22NFDATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 600V 20A |
Produkt ist nicht verfügbar |
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IPB156N22NFDATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 600V 20A |
Produkt ist nicht verfügbar |
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IPB156N22NFDATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 220V 72A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 15.6mOhm @ 50A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 220 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 110 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 110 |
Produkt ist nicht verfügbar |