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IPB136N08N3GATMA1

IPB136N08N3GATMA1 Infineon Technologies

INFN-S-A0001299567-1.pdf?t.download=true&u=5oefqw Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 45A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
611+0.8 EUR
Mindestbestellmenge: 611
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Technische Details IPB136N08N3GATMA1 Infineon Technologies

Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 13.9mOhm @ 45A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 33µA, Supplier Device Package: PG-TO263-3, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V.

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IPB136N08N3GATMA1 IPB136N08N3GATMA1 Hersteller : Infineon Technologies dgdlfolderid5546d4694909da4801490a07012f053bfileid5546d4624fb7fef.pdf Trans MOSFET N-CH 80V 45A 3-Pin(2+Tab) D2PAK T/R
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