IPB110N20N3LF INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 61A; 250W; PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 11mΩ
Drain current: 61A
Drain-source voltage: 200V
Case: PG-TO263-3
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 250W
Anzahl je Verpackung: 1 Stücke
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Technische Details IPB110N20N3LF INFINEON TECHNOLOGIES
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 61A; 250W; PG-TO263-3, Mounting: SMD, Type of transistor: N-MOSFET, On-state resistance: 11mΩ, Drain current: 61A, Drain-source voltage: 200V, Case: PG-TO263-3, Technology: OptiMOS™ 3, Kind of channel: enhanced, Gate-source voltage: ±20V, Polarisation: unipolar, Power dissipation: 250W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IPB110N20N3LF
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IPB110N20N3LF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 61A; 250W; PG-TO263-3 Mounting: SMD Type of transistor: N-MOSFET On-state resistance: 11mΩ Drain current: 61A Drain-source voltage: 200V Case: PG-TO263-3 Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar Power dissipation: 250W |
Produkt ist nicht verfügbar |