IPB100N10S305ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 100V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 3.99 EUR |
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Technische Details IPB100N10S305ATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 100A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 240µA, Supplier Device Package: PG-TO263-3-2, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V.
Weitere Produktangebote IPB100N10S305ATMA1 nach Preis ab 3.99 EUR bis 9.8 EUR
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IPB100N10S305ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 100A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 240µA Supplier Device Package: PG-TO263-3-2 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V |
auf Bestellung 1561 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB100N10S305ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 100A Automotive 3-Pin(2+Tab) D2PAK T/R |
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| IPB100N10S305ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: OptiMOS® -T Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 400A Power dissipation: 300W Case: PG-TO263-3-2 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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| IPB100N10S305ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: OptiMOS® -T Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 400A Power dissipation: 300W Case: PG-TO263-3-2 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |