IPAW60R180P7SXKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 650V 18A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
Description: MOSFET N-CHANNEL 650V 18A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
auf Bestellung 1043 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
9+ | 1.97 EUR |
45+ | 1.59 EUR |
135+ | 1.31 EUR |
540+ | 1.18 EUR |
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Technische Details IPAW60R180P7SXKSA1 Infineon Technologies
Description: MOSFET N-CHANNEL 650V 18A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V, Power Dissipation (Max): 26W (Tc), Vgs(th) (Max) @ Id: 4V @ 280µA, Supplier Device Package: PG-TO220 Full Pack, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V.
Weitere Produktangebote IPAW60R180P7SXKSA1 nach Preis ab 1.08 EUR bis 2.89 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IPAW60R180P7SXKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 720 Stücke: Lieferzeit 14-21 Tag (e) |
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IPAW60R180P7SXKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 728 Stücke: Lieferzeit 14-21 Tag (e) |
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IPAW60R180P7SXKSA1 | Hersteller : Infineon Technologies | MOSFET CONSUMER |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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IPAW60R180P7SXKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 278 Stücke: Lieferzeit 14-21 Tag (e) |
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IPAW60R180P7SXKSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPAW60R180P7SXKSA1 - IPAW60R180 - 600V, N-CHANEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 978 Stücke: Lieferzeit 14-21 Tag (e) |
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IPAW60R180P7SXKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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IPAW60R180P7SXKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |