Technische Details IPA90R800C3 Infineon technologies
Description: MOSFET N-CH 900V 6.9A TO220, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 460µA, Supplier Device Package: PG-TO220 Full Pack, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V.
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IPA90R800C3 | Hersteller : Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 460µA Supplier Device Package: PG-TO220 Full Pack Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
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IPA90R800C3 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |