IPA90R500C3XKSA2 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 900V 11A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 740µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
auf Bestellung 485 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 5.65 EUR |
| 10+ | 4.74 EUR |
| 100+ | 3.84 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPA90R500C3XKSA2 Infineon Technologies
Description: MOSFET N-CH 900V 11A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 740µA, Supplier Device Package: PG-TO220-FP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V.
Weitere Produktangebote IPA90R500C3XKSA2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IPA90R500C3XKSA2 | Hersteller : Infineon Technologies |
Power Mosfet |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
||
 |
IPA90R500C3XKSA2 | Hersteller : Infineon Technologies |
MOSFET LOW POWER_LEGACY |
Produkt ist nicht verfügbar |