auf Bestellung 866 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.56 EUR |
| 10+ | 1.26 EUR |
| 100+ | 1.16 EUR |
| 2500+ | 1.01 EUR |
| 5000+ | 0.96 EUR |
| 10000+ | 0.92 EUR |
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Technische Details IPA70R900P7SXKSA1 Infineon Technologies
Description: MOSFET N-CH 700V 6A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V, Power Dissipation (Max): 20.5W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 60µA, Supplier Device Package: PG-TO220-FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 400 V, Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V.
Weitere Produktangebote IPA70R900P7SXKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IPA70R900P7SXKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 700V 6A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA70R900P7SXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 700V 6A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V Power Dissipation (Max): 20.5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: PG-TO220-FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 400 V Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V |
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