![IPA65R600E6 IPA65R600E6](https://www.mouser.com/images/mouserelectronics/lrg/TO_220_FullPack_3_t.jpg)
IPA65R600E6 Infineon Technologies
auf Bestellung 459 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.17 EUR |
10+ | 2.87 EUR |
100+ | 2.31 EUR |
500+ | 1.83 EUR |
1000+ | 1.42 EUR |
5000+ | 1.37 EUR |
10000+ | 1.36 EUR |
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Technische Details IPA65R600E6 Infineon Technologies
Description: IPA65R600 - 650V AND 700V COOLMO, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V, Power Dissipation (Max): 28W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 210µA, Supplier Device Package: PG-TO220-3-111, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V.
Weitere Produktangebote IPA65R600E6
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IPA65R600E6 | Hersteller : Infineon technologies |
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auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) |
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IPA65R600E6 | Hersteller : Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 210µA Supplier Device Package: PG-TO220-3-111 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V |
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