auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.1 EUR |
| 10+ | 3.01 EUR |
| 100+ | 2.18 EUR |
| 500+ | 1.97 EUR |
| 2500+ | 1.95 EUR |
| 5000+ | 1.94 EUR |
| 10000+ | 1.9 EUR |
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Technische Details IPA65R420CFDXKSA2 Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V, Power Dissipation (Max): 31.2W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 300µA, Supplier Device Package: PG-TO220-FP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V.
Weitere Produktangebote IPA65R420CFDXKSA2 nach Preis ab 2.09 EUR bis 4.66 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IPA65R420CFDXKSA2 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 650V 8.7A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Power Dissipation (Max): 31.2W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 300µA Supplier Device Package: PG-TO220-FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V |
auf Bestellung 460 Stücke: Lieferzeit 10-14 Tag (e) |
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