![IPA65R190C7 IPA65R190C7](https://media.digikey.com/Photos/Rochester/MFG_MC78M05BTG.jpg)
IPA65R190C7 Infineon Technologies
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Description: IPA65R190 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
auf Bestellung 424 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
180+ | 2.94 EUR |
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Technische Details IPA65R190C7 Infineon Technologies
Description: IPA65R190 - 650V AND 700V COOLMO, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4V @ 290µA, Supplier Device Package: PG-TO220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V.
Weitere Produktangebote IPA65R190C7 nach Preis ab 2.43 EUR bis 4.68 EUR
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IPA65R190C7 | Hersteller : Infineon Technologies |
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auf Bestellung 546 Stücke: Lieferzeit 10-14 Tag (e) |
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