IPA60R360CFD7XKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 679 pF @ 400 V
Description: MOSFET N-CH 650V 5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 679 pF @ 400 V
auf Bestellung 470 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.34 EUR |
10+ | 2.78 EUR |
100+ | 2.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPA60R360CFD7XKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 5A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V, Power Dissipation (Max): 23W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 140µA, Supplier Device Package: PG-TO220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 679 pF @ 400 V.
Weitere Produktangebote IPA60R360CFD7XKSA1 nach Preis ab 1.51 EUR bis 3.47 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IPA60R360CFD7XKSA1 | Hersteller : Infineon Technologies | MOSFETs Y |
auf Bestellung 522 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
IPA60R360CFD7XKSA1 | Hersteller : Infineon |
auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||
IPA60R360CFD7XKSA1 | Hersteller : Infineon Technologies | SP002621076 |
Produkt ist nicht verfügbar |
||||||||||||||||
IPA60R360CFD7XKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
||||||||||||||||
IPA60R360CFD7XKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |