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IPA60R280P7SE8228XKSA1 Infineon Technologies


Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
auf Bestellung 699750 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
485+1 EUR
Mindestbestellmenge: 485
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Technische Details IPA60R280P7SE8228XKSA1 Infineon Technologies

Description: MOSFET N-CH 600V 12A TO220, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V, Power Dissipation (Max): 24W (Tc), Vgs(th) (Max) @ Id: 4V @ 190µA, Supplier Device Package: PG-TO220-FP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V.

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IPA60R280P7SE8228XKSA1 Hersteller : Infineon Technologies infineon-ipa60r280p7s-datasheet-v02_02-en.pdf SP002367752
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IPA60R280P7SE8228XKSA1 Hersteller : Infineon Technologies infineon-ipa60r280p7s-datasheet-v02_02-en.pdf 600V Cool MOS P7PowerTransistor
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IPA60R280P7SE8228XKSA1 Hersteller : Infineon Technologies Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
Produkt ist nicht verfügbar
IPA60R280P7SE8228XKSA1 Hersteller : Infineon Technologies Infineon_IPA60R280P7_DataSheet_v02_02_EN-1859274.pdf MOSFET CONSUMER
Produkt ist nicht verfügbar