auf Bestellung 149 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.08 EUR |
| 10+ | 3.4 EUR |
| 100+ | 2.69 EUR |
| 250+ | 2.48 EUR |
| 500+ | 2.25 EUR |
| 1000+ | 1.94 EUR |
| 2500+ | 1.83 EUR |
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Technische Details IPA60R280P6 Infineon Technologies
Description: 600V, N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 430µA, Supplier Device Package: PG-TO220-3-111, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V.
Weitere Produktangebote IPA60R280P6
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| IPA60R280P6 | Hersteller : Infineon technologies |
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auf Bestellung 34 Stücke: Lieferzeit 21-28 Tag (e) |
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IPA60R280P6 | Hersteller : Infineon Technologies |
Description: 600V, N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 430µA Supplier Device Package: PG-TO220-3-111 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V |
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