IMZA65R030M1HXKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET, PG-TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 29.5A, 18V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 8.8mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -2V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 400 V
Description: SILICON CARBIDE MOSFET, PG-TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 29.5A, 18V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 8.8mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -2V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 400 V
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 26.07 EUR |
30+ | 21.09 EUR |
120+ | 19.85 EUR |
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Technische Details IMZA65R030M1HXKSA1 Infineon Technologies
Description: SILICON CARBIDE MOSFET, PG-TO247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 29.5A, 18V, Power Dissipation (Max): 197W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 8.8mA, Supplier Device Package: PG-TO247-4-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +20V, -2V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 400 V.
Weitere Produktangebote IMZA65R030M1HXKSA1 nach Preis ab 20.6 EUR bis 32.45 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
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IMZA65R030M1HXKSA1 | Hersteller : Infineon Technologies | MOSFET SILICON CARBIDE MOSFET |
auf Bestellung 161 Stücke: Lieferzeit 10-14 Tag (e) |
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IMZA65R030M1HXKSA1 | Hersteller : INFINEON |
Description: INFINEON - IMZA65R030M1HXKSA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 53 A, 650 V, 0.03 ohm, TO-247 tariffCode: 85412100 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 53A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 197W Anzahl der Pins: 4Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.03ohm |
auf Bestellung 170 Stücke: Lieferzeit 14-21 Tag (e) |
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IMZA65R030M1HXKSA1 | Hersteller : Infineon Technologies | Silicon Carbide Power Mosfet |
auf Bestellung 1440 Stücke: Lieferzeit 14-21 Tag (e) |
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IMZA65R030M1HXKSA1 | Hersteller : Infineon Technologies | Silicon Carbide Power Mosfet |
auf Bestellung 328 Stücke: Lieferzeit 14-21 Tag (e) |
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IMZA65R030M1HXKSA1 | Hersteller : Infineon Technologies | Silicon Carbide Power Mosfet |
auf Bestellung 328 Stücke: Lieferzeit 14-21 Tag (e) |
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IMZA65R030M1HXKSA1 | Hersteller : Infineon Technologies | SP005423795 |
Produkt ist nicht verfügbar |