IMZ120R090M1HXKSA1 Infineon Technologies
auf Bestellung 328 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 14.5 EUR |
| 10+ | 12.64 EUR |
| 25+ | 10.23 EUR |
| 100+ | 8.71 EUR |
| 240+ | 8.69 EUR |
| 480+ | 8.61 EUR |
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Technische Details IMZ120R090M1HXKSA1 Infineon Technologies
Description: SICFET N-CH 1.2KV 26A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 117mOhm @ 8.5A, 18V, Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 3.7mA, Supplier Device Package: PG-TO247-4-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 800 V.
Weitere Produktangebote IMZ120R090M1HXKSA1 nach Preis ab 12.42 EUR bis 17.99 EUR
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IMZ120R090M1HXKSA1 | Hersteller : Infineon Technologies |
 Description: SICFET N-CH 1.2KV 26A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 117mOhm @ 8.5A, 18V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 3.7mA Supplier Device Package: PG-TO247-4-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 800 V |
auf Bestellung 602 Stücke: Lieferzeit 10-14 Tag (e) |
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IMZ120R090M1HXKSA1 | Hersteller : INFINEON |
Description: INFINEON - IMZ120R090M1HXKSA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 26 A, 1.2 kV, 0.09 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 26A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 115W Anzahl der Pins: 4Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.09ohm |
auf Bestellung 140 Stücke: Lieferzeit 14-21 Tag (e) |
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| IMZ120R090M1HXKSA1 | Hersteller : Infineon Technologies |
Silicon Carbide Power Mosfet |
auf Bestellung 110 Stücke: Lieferzeit 14-21 Tag (e) |
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| IMZ120R090M1HXKSA1 | Hersteller : Infineon Technologies |
Silicon Carbide Power Mosfet |
Produkt ist nicht verfügbar |
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| IMZ120R090M1HXKSA1 | Hersteller : Infineon Technologies |
Silicon Carbide Power Mosfet |
Produkt ist nicht verfügbar |
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| IMZ120R090M1HXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 50A; 58W Mounting: THT Drain-source voltage: 1.2kV Drain current: 18A On-state resistance: 0.17Ω Type of transistor: N-MOSFET Power dissipation: 58W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 50A Case: TO247-4 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IMZ120R090M1HXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 50A; 58W Mounting: THT Drain-source voltage: 1.2kV Drain current: 18A On-state resistance: 0.17Ω Type of transistor: N-MOSFET Power dissipation: 58W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 50A Case: TO247-4 |
Produkt ist nicht verfügbar |