IMZ120R060M1HXKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: SICFET N-CH 1.2KV 36A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 5.6mA
Supplier Device Package: PG-TO247-4-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 800 V
Description: SICFET N-CH 1.2KV 36A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 5.6mA
Supplier Device Package: PG-TO247-4-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 800 V
auf Bestellung 267 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 19.25 EUR |
10+ | 13.41 EUR |
100+ | 10.11 EUR |
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Technische Details IMZ120R060M1HXKSA1 Infineon Technologies
Description: SICFET N-CH 1.2KV 36A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 5.6mA, Supplier Device Package: PG-TO247-4-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 800 V.
Weitere Produktangebote IMZ120R060M1HXKSA1 nach Preis ab 19.03 EUR bis 27.54 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
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IMZ120R060M1HXKSA1 | Hersteller : Infineon Technologies | MOSFET SIC DISCRETE |
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IMZ120R060M1HXKSA1 | Hersteller : INFINEON |
Description: INFINEON - IMZ120R060M1HXKSA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 36 A, 1.2 kV, 0.06 ohm, TO-247 tariffCode: 85411000 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 36A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 150W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: CoolSiC productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.06ohm SVHC: No SVHC (27-Jun-2018) |
auf Bestellung 355 Stücke: Lieferzeit 14-21 Tag (e) |
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IMZ120R060M1HXKSA1 | Hersteller : Infineon Technologies | Silicon Carbide Power Mosfet |
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IMZ120R060M1HXKSA1 | Hersteller : Infineon Technologies | Silicon Carbide Power Mosfet |
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IMZ120R060M1HXKSA1 | Hersteller : Infineon Technologies | Silicon Carbide Power Mosfet |
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IMZ120R060M1HXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 76A; 75W Mounting: THT Drain-source voltage: 1.2kV Drain current: 26A On-state resistance: 113mΩ Type of transistor: N-MOSFET Power dissipation: 75W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 76A Case: TO247-4 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IMZ120R060M1HXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 76A; 75W Mounting: THT Drain-source voltage: 1.2kV Drain current: 26A On-state resistance: 113mΩ Type of transistor: N-MOSFET Power dissipation: 75W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 76A Case: TO247-4 |
Produkt ist nicht verfügbar |