auf Bestellung 946 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 17.09 EUR |
| 10+ | 15.7 EUR |
| 25+ | 13.71 EUR |
| 100+ | 13.11 EUR |
| 240+ | 11.9 EUR |
| 480+ | 11.55 EUR |
| 1200+ | 10.65 EUR |
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Technische Details IMW120R060M1HXKSA1 Infineon Technologies
Description: SICFET N-CH 1.2KV 36A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 5.6mA, Supplier Device Package: PG-TO247-3-41, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 800 V.
Weitere Produktangebote IMW120R060M1HXKSA1 nach Preis ab 10.55 EUR bis 18.6 EUR
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IMW120R060M1HXKSA1 | Hersteller : Infineon Technologies |
 Description: SICFET N-CH 1.2KV 36A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 5.6mA Supplier Device Package: PG-TO247-3-41 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 800 V |
auf Bestellung 1305 Stücke: Lieferzeit 10-14 Tag (e) |
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| IMW120R060M1HXKSA1 | Hersteller : Infineon Technologies |
SP001808368 |
auf Bestellung 392 Stücke: Lieferzeit 14-21 Tag (e) |
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| IMW120R060M1HXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 76A; 75W; TO247 Mounting: THT Drain-source voltage: 1.2kV Drain current: 26A On-state resistance: 113mΩ Type of transistor: N-MOSFET Power dissipation: 75W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 76A Case: TO247 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IMW120R060M1HXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 76A; 75W; TO247 Mounting: THT Drain-source voltage: 1.2kV Drain current: 26A On-state resistance: 113mΩ Type of transistor: N-MOSFET Power dissipation: 75W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 76A Case: TO247 |
Produkt ist nicht verfügbar |